Optically controlled GaAs dual-gate MESFET and permeable base transistors
Read Online

Optically controlled GaAs dual-gate MESFET and permeable base transistors

  • 804 Want to read
  • ·
  • 75 Currently reading

Published by National Aeronautics and Space Administration, For sale by the National Technical Information Service in [Washington, DC], [Springfield, Va .
Written in English


  • Microwave devices.

Book details:

Edition Notes

StatementR.N. Simons and K.B. Bhasin.
SeriesNASA technical memorandum -- 88823.
ContributionsBhasin, K. B., United States. National Aeronautics and Space Administration.
The Physical Object
Pagination1 v.
ID Numbers
Open LibraryOL15286803M

Download Optically controlled GaAs dual-gate MESFET and permeable base transistors


Optically controlled GaAs dual-gate MESFET and permeable. Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below microns were obtained and compared with GaAs MESFET. It was observed that PBT Author: R. N. Simons and K. B. Bhasin. Abstract: The switching characteristics of an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), popularly known as Optical Field Effect Transistor (OPFET), have been derived analytically. The limitations of the existing model have been overcome in the present model. Calculations are being carried out to examine the effect of illumination on the current-voltage. A GaAs MESFET large-signal equivalent circuit model with optical illumination effects has been developed. The model includes accurate representation of the drain current dependence on the operating voltages under different operational conditions. The model for the GaAs MESFET was implemented in PSPICE. Simulated results obtained are shown to compare well with the measured results, with a .

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C) Ultra Linear, High Dynamic Range, Low Phase Noise; GaAs Process is Approved for Space Applications with Proven Reliability; Commercial, Industrial, Military, and Space Grade; % Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF Recently the Optically controlled GaAs MESFET is considered as key device used for the design of photo-detector [1 Book. Jan ; and GaAs permeable base transistor (PBT) are analytically. The light-induced voltage and the change in the source-to-drain channel current under optical illumination higher than the semiconductor bandgap for GaAs MESFET, InP MESFET, A1/sub /Ga/sub /As/GaAs high electron mobility transistor (HEMT) and GaAs permeable base transistor (PBT) were analytically obtained. The GaAs PBT and GaAs MESFET have much higher sensitivity than InP MESFET. Optical control of GaAs MESFET's. IEEE Trans Microwave Theory Tech ; This classic book has set the standard for advanced study and reference in the semiconductor device field.

The dual gate MOSFET can be used in a number of applications including RF mixers /multipliers, RF amplifiers, amplifiers with gain control and the like. Dual gate MOSFET structure The dual gate MOSFET has what may be referred to as a tetrode construction where the two grids control the current through the channel. We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) cannot be turned off effectively due to the absence of a band gap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical. Gasfet Preamp That because, if the coaxial cable between Antenna - LNA (input of LNA) is long enough and it has a significant Loss, ie 3 dB, the total NF. MHz 40W FM Power Amplifier.